Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | - |
Vgs (Max): | - |
Teknologi: | SiC (Silicon Carbide Junction Transistor) |
Leverandør Device Package: | TO-247AB |
Serie: | - |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 16A |
Power Dissipation (Max): | 282W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-247-3 |
Andre navne: | 1242-1136 GA16JT17247 |
Driftstemperatur: | 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
FET Type: | - |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | - |
Afløb til Source Voltage (VDSS): | 1700V |
Detaljeret beskrivelse: | 1700V 16A (Tc) (90°C) 282W (Tc) Through Hole TO-247AB |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 16A (Tc) (90°C) |
Email: | [email protected] |