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Hjem > Produkter > Diskrete halvlederprodukter > Transistorer - FET'er, MOSFET'er - Single > FQA8N80C_F109
FQA8N80C_F109
FQA8N80C_F109
Varenummer:
FQA8N80C_F109
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beskrivelse:
MOSFET N-CH 800V 8.4A TO-3P
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
44975 Pieces
Leveringstid:
1-2 days
Datablad:
FQA8N80C_F109.pdf
Forespørgsel

Introduktion

We can supply FQA8N80C_F109, use the request quote form to request FQA8N80C_F109 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQA8N80C_F109.The price and lead time for FQA8N80C_F109 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQA8N80C_F109.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:TO-3PN
Serie:QFET®
Rds On (Max) @ Id, Vgs:1.55 Ohm @ 4.2A, 10V
Power Dissipation (Max):220W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-3P-3, SC-65-3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:2050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):800V
Detaljeret beskrivelse:N-Channel 800V 8.4A (Tc) 220W (Tc) Through Hole TO-3PN
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:8.4A (Tc)
Email:[email protected]

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