Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Transistor-Typ: | NPN - Pre-Biased |
Supplier Device-Gehäuse: | Mini3-G1 |
Serie: | - |
Widerstand - Emitterbasis (R2): | 10 kOhms |
Widerstand - Basis (R1): | 1 kOhms |
Leistung - max: | 200mW |
Verpackung: | Cut Tape (CT) |
Verpackung / Gehäuse: | TO-236-3, SC-59, SOT-23-3 |
Andere Namen: | UN2219 UN2219CT UN2219CT-ND UNR221900LCT |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | 150MHz |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 200mW Surface Mount Mini3-G1 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 30 @ 5mA, 10V |
Strom - Collector Cutoff (Max): | 500nA |
Strom - Kollektor (Ic) (max): | 100mA |
Email: | [email protected] |