Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
VGS (th) (Max) @ Id: | 1.2V @ 200µA |
Vgs (Max): | ±12V |
Technologie: | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse: | VS-8 (2.9x1.5) |
Serie: | U-MOSIII |
Rds On (Max) @ Id, Vgs: | 49 mOhm @ 1.5A, 4.5V |
Verlustleistung (max): | 330mW (Ta) |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | 8-SMD, Flat Lead |
Andere Namen: | TPCF8A01(TE85L)TR TPCF8A01(TE85L,F) TPCF8A01(TE85L,F)-ND TPCF8A01FTR TPCF8A01FTR-ND TPCF8A01TE85L TPCF8A01TE85LF TPCF8A01TR TPCF8A01TR-ND |
Betriebstemperatur: | 150°C (TJ) |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Eingabekapazität (Ciss) (Max) @ Vds: | 590pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 5V |
Typ FET: | N-Channel |
FET-Merkmal: | Schottky Diode (Isolated) |
Antriebsspannung (Max Rds On, Min Rds On): | 2V, 4.5V |
Drain-Source-Spannung (Vdss): | 20V |
detaillierte Beschreibung: | N-Channel 20V 3A (Ta) 330mW (Ta) Surface Mount VS-8 (2.9x1.5) |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 3A (Ta) |
Email: | [email protected] |