SI7121DN-T1-GE3
SI7121DN-T1-GE3
Artikelnummer:
SI7121DN-T1-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET P-CH 30V 16A 1212-8
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
15337 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SI7121DN-T1-GE3.pdf

Einführung

We can supply SI7121DN-T1-GE3, use the request quote form to request SI7121DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7121DN-T1-GE3.The price and lead time for SI7121DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI7121DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±25V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PowerPAK® 1212-8
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:18 mOhm @ 10A, 10V
Verlustleistung (max):3.7W (Ta), 52W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:PowerPAK® 1212-8
Andere Namen:SI7121DN-T1-GE3TR
SI7121DNT1GE3
Betriebstemperatur:-50°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:27 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1960pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:65nC @ 10V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:16A (Tc)
Email:[email protected]

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