SI4946BEY-T1-E3
Artikelnummer:
SI4946BEY-T1-E3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET 2N-CH 60V 6.5A 8-SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
22731 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SI4946BEY-T1-E3.pdf

Einführung

We can supply SI4946BEY-T1-E3, use the request quote form to request SI4946BEY-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4946BEY-T1-E3.The price and lead time for SI4946BEY-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4946BEY-T1-E3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Supplier Device-Gehäuse:8-SO
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:41 mOhm @ 5.3A, 10V
Leistung - max:3.7W
Verpackung:Original-Reel®
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:SI4946BEY-T1-E3DKR
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:33 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:840pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):60V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 60V 6.5A 3.7W Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6.5A
Basisteilenummer:SI4946
Email:[email protected]

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