SI4836DY-T1-GE3
Artikelnummer:
SI4836DY-T1-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET N-CH 12V 17A 8-SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
40617 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SI4836DY-T1-GE3.pdf

Einführung

We can supply SI4836DY-T1-GE3, use the request quote form to request SI4836DY-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI4836DY-T1-GE3.The price and lead time for SI4836DY-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI4836DY-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:400mV @ 250µA (Min)
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-SO
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:3 mOhm @ 25A, 4.5V
Verlustleistung (max):1.6W (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:75nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.8V, 4.5V
Drain-Source-Spannung (Vdss):12V
detaillierte Beschreibung:N-Channel 12V 17A (Ta) 1.6W (Ta) Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:17A (Ta)
Email:[email protected]

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