Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V, 40V |
VCE Sättigung (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA |
Transistor-Typ: | 1 NPN Pre-Biased, 1 PNP |
Supplier Device-Gehäuse: | 6-TSSOP |
Serie: | - |
Widerstand - Emitterbasis (R2): | 47 kOhms |
Widerstand - Basis (R1): | 22 kOhms |
Leistung - max: | 300mW |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | 6-TSSOP, SC-88, SOT-363 |
Andere Namen: | 1727-2417-2 568-12716-2 568-12716-2-ND 934057051115 PUMF11 T/R PUMF11 T/R-ND PUMF11,115-ND |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | 100MHz |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA 100MHz 300mW Surface Mount 6-TSSOP |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 80 @ 5mA, 5V / 120 @ 1mA, 6V |
Strom - Collector Cutoff (Max): | 1µA |
Strom - Kollektor (Ic) (max): | 100mA |
Email: | [email protected] |