Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Transistor-Typ: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Supplier Device-Gehäuse: | DFN1010B-6 |
Serie: | - |
Widerstand - Emitterbasis (R2): | 47 kOhms |
Widerstand - Basis (R1): | 47 kOhms |
Leistung - max: | 350mW |
Verpackung: | Cut Tape (CT) |
Verpackung / Gehäuse: | 6-XFDFN Exposed Pad |
Andere Namen: | 1727-1479-1 568-10950-1 568-10950-1-ND |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Hersteller Standard Vorlaufzeit: | 8 Weeks |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | 230MHz, 180MHz |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 350mW Surface Mount DFN1010B-6 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 80 @ 5mA, 5V |
Strom - Collector Cutoff (Max): | 100nA (ICBO) |
Strom - Kollektor (Ic) (max): | 100mA |
Email: | [email protected] |