PD20010-E
PD20010-E
Artikelnummer:
PD20010-E
Hersteller:
STMicroelectronics
Beschreibung:
TRANS RF N-CH FET POWERSO-10RF
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
45373 Pieces
Lieferzeit:
1-2 days
Datenblatt:
PD20010-E.pdf

Einführung

We can supply PD20010-E, use the request quote form to request PD20010-E pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number PD20010-E.The price and lead time for PD20010-E depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# PD20010-E.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Prüfung:13.6V
Spannung - Nennwert:40V
Transistor-Typ:LDMOS
Supplier Device-Gehäuse:PowerSO-10RF (Formed Lead)
Serie:-
Leistung:10W
Verpackung:Tube
Verpackung / Gehäuse:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Andere Namen:497-13044-5
PD20010-E-ND
PD20010E
Rauschmaß:-
Feuchtigkeitsempfindlichkeitsniveau (MSL):3 (168 Hours)
Hersteller Standard Vorlaufzeit:25 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Gewinnen:11dB
Frequenz:2GHz
detaillierte Beschreibung:RF Mosfet LDMOS 13.6V 150mA 2GHz 11dB 10W PowerSO-10RF (Formed Lead)
Aktuelle Bewertung:5A
Strom - Test:150mA
Basisteilenummer:PD20010
Email:[email protected]

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