Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 40V |
VCE Sättigung (Max) @ Ib, Ic: | 1.15V @ 8mA, 800mA |
Transistor-Typ: | NPN - Pre-Biased |
Supplier Device-Gehäuse: | SMT3; MPAK |
Serie: | - |
Widerstand - Emitterbasis (R2): | 10 kOhms |
Widerstand - Basis (R1): | 2.2 kOhms |
Leistung - max: | 250mW |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | TO-236-3, SC-59, SOT-23-3 |
Andere Namen: | 934058962115 PBRN123YK T/R PBRN123YK T/R-ND |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 600mA 250mW Surface Mount SMT3; MPAK |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 500 @ 300mA, 5V |
Strom - Collector Cutoff (Max): | 500nA |
Strom - Kollektor (Ic) (max): | 600mA |
Basisteilenummer: | PBRN123 |
Email: | [email protected] |