Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V, 20V |
VCE Sättigung (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A |
Transistor-Typ: | 1 NPN Pre-Biased, 1 PNP |
Supplier Device-Gehäuse: | 8-SO |
Serie: | - |
Widerstand - Emitterbasis (R2): | 10 kOhms |
Widerstand - Basis (R1): | 10 kOhms |
Leistung - max: | 1.5W |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | 8-SOIC (0.154", 3.90mm Width) |
Andere Namen: | 568-7231-2 934060279115 PBLS2003S T/R PBLS2003S T/R-ND PBLS2003S,115-ND |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | 100MHz |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 3A 100MHz 1.5W Surface Mount 8-SO |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 30 @ 5mA, 5V / 150 @ 2A, 2V |
Strom - Collector Cutoff (Max): | 1µA, 100nA |
Strom - Kollektor (Ic) (max): | 100mA, 3A |
Basisteilenummer: | PBLS2003 |
Email: | [email protected] |