NTR3162PT1G
NTR3162PT1G
Artikelnummer:
NTR3162PT1G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET P-CH 20V 2.2A SOT-23
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
30085 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTR3162PT1G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SOT-23-3 (TO-236)
Serie:-
Rds On (Max) @ Id, Vgs:70 mOhm @ 2.2A, 4.5V
Verlustleistung (max):480mW (Ta)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-236-3, SC-59, SOT-23-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:940pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:10.3nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.5V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:P-Channel 20V 2.2A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.2A (Ta)
Email:[email protected]

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