NTP60N06LG
NTP60N06LG
Artikelnummer:
NTP60N06LG
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 60V 60A TO220AB
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
35128 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTP60N06LG.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±15V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220AB
Serie:-
Rds On (Max) @ Id, Vgs:16 mOhm @ 30A, 5V
Verlustleistung (max):2.4W (Ta), 150W (Tj)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Andere Namen:NTP60N06LGOS
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:3075pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:65nC @ 5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):5V
Drain-Source-Spannung (Vdss):60V
detaillierte Beschreibung:N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Through Hole TO-220AB
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:60A (Ta)
Email:[email protected]

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