NTMFD4902NFT3G
NTMFD4902NFT3G
Artikelnummer:
NTMFD4902NFT3G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET 2N-CH 30V 8DFN
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
79390 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NTMFD4902NFT3G.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.2V @ 250µA
Supplier Device-Gehäuse:8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Serie:-
Rds On (Max) @ Id, Vgs:6.5 mOhm @ 10A, 10V
Leistung - max:1.1W, 1.16W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerTDFN
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:46 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:9.7nC @ 4.5V
Typ FET:2 N-Channel (Dual), Schottky
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual), Schottky 30V 10.3A, 13.3A 1.1W, 1.16W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:10.3A, 13.3A
Email:[email protected]

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