NSS40302PDR2G
Artikelnummer:
NSS40302PDR2G
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
TRANS NPN/PNP 40V 3A 8SOIC
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
56923 Pieces
Lieferzeit:
1-2 days
Datenblatt:
NSS40302PDR2G.pdf

Einführung

We can supply NSS40302PDR2G, use the request quote form to request NSS40302PDR2G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NSS40302PDR2G.The price and lead time for NSS40302PDR2G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NSS40302PDR2G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):40V
VCE Sättigung (Max) @ Ib, Ic:115mV @ 200mA, 2A
Transistor-Typ:NPN, PNP
Supplier Device-Gehäuse:8-SOIC
Serie:-
Leistung - max:653mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:NSS40302PDR2G-ND
NSS40302PDR2GOSTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:2 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:100MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor Array NPN, PNP 40V 3A 100MHz 653mW Surface Mount 8-SOIC
DC Stromgewinn (HFE) (Min) @ Ic, VCE:180 @ 1A, 2V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):3A
Email:[email protected]

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