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Zuhause > Produkte > Integrierte schaltkreise (ICS) > Memory > MT46H64M32LFKQ-5 IT:C TR
MT46H64M32LFKQ-5 IT:C TR
Artikelnummer:
MT46H64M32LFKQ-5 IT:C TR
Hersteller:
Micron Technology
Beschreibung:
IC DRAM 2G PARALLEL 168FBGA
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
15442 Pieces
Lieferzeit:
1-2 days
Datenblatt:
MT46H64M32LFKQ-5 IT:C TR.pdf
Anfrage

Einführung

We can supply MT46H64M32LFKQ-5 IT:C TR, use the request quote form to request MT46H64M32LFKQ-5 IT:C TR pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MT46H64M32LFKQ-5 IT:C TR.The price and lead time for MT46H64M32LFKQ-5 IT:C TR depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# MT46H64M32LFKQ-5 IT:C TR.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Schreibzyklus Zeit - Wort, Seite:15ns
Spannungsversorgung:1.7 V ~ 1.95 V
Technologie:SDRAM - Mobile LPDDR
Supplier Device-Gehäuse:168-FBGA (12x12)
Serie:-
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:168-WFBGA
Andere Namen:MT46H64M32LFKQ-5 IT:C TR-ND
MT46H64M32LFKQ-5IT:CTR
Betriebstemperatur:-40°C ~ 85°C (TA)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):3 (168 Hours)
Speichertyp:Volatile
Speichergröße:2Gb (64M x 32)
Speicherschnittstelle:Parallel
Speicherformat:DRAM
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:SDRAM - Mobile LPDDR Memory IC 2Gb (64M x 32) Parallel 167MHz 5.0ns 168-FBGA (12x12)
Uhrfrequenz:167MHz
Zugriffszeit:5.0ns
Email:[email protected]

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In Verbindung stehende Teile für MT46H64M32LFKQ-5 IT:C TR

Image Artikelnummer Hersteller Beschreibung Aussicht
MT46H64M32LFCX-6 AT:B TR Micron Technology IC DRAM 2G PARALLEL 90VFBGA Anfrage
MT46H64M32LFMA-5 WT:B Image MT46H64M32LFMA-5 WT:B Micron Technology IC DRAM 2G PARALLEL 168WFBGA Anfrage
MT46H64M32LFCX-6 IT:B Micron Technology IC DRAM 2G PARALLEL 90VFBGA Anfrage
MT46H64M32LFMA-5 IT:B Image MT46H64M32LFMA-5 IT:B Micron Technology IC DRAM 2G PARALLEL 168WFBGA Anfrage
MT46H64M32LFCX-6 AT:B Micron Technology IC DRAM 2G PARALLEL 90VFBGA Anfrage
MT46H64M32LFMA-5 WT:B TR Image MT46H64M32LFMA-5 WT:B TR Micron Technology IC DRAM 2G PARALLEL 168WFBGA Anfrage
MT46H64M32LFKQ-5 IT:C Micron Technology IC DRAM 2G PARALLEL 167MHZ Anfrage
MT46H64M32LFMA-5 IT:A Image MT46H64M32LFMA-5 IT:A Micron Technology IC DRAM 2G PARALLEL 168WFBGA Anfrage
MT46H64M32LFCX-6 IT:B TR Micron Technology IC DRAM 2G PARALLEL 90VFBGA Anfrage
MT46H64M32LFCX-5 WT:B TR Micron Technology IC DRAM 2G PARALLEL 90VFBGA Anfrage
MT46H64M32LFMA-6 IT:B Image MT46H64M32LFMA-6 IT:B Micron Technology IC DRAM 2G PARALLEL 168WFBGA Anfrage
MT46H64M32LFMA-5 IT:B TR Image MT46H64M32LFMA-5 IT:B TR Micron Technology IC DRAM 2G PARALLEL 168WFBGA Anfrage
MT46H64M32LFCX-6 WT:B Micron Technology IC DRAM 2G PARALLEL 90VFBGA Anfrage
MT46H64M32LFMA-6 IT:A Image MT46H64M32LFMA-6 IT:A Micron Technology IC DRAM 2G PARALLEL 168WFBGA Anfrage
MT46H64M32LFCX-5 WT:B Micron Technology IC DRAM 2G PARALLEL 90VFBGA Anfrage
MT46H64M32LFCX-5 IT:B TR Micron Technology IC DRAM 2G PARALLEL 90VFBGA Anfrage
MT46H64M32LFMA-6 WT:B Image MT46H64M32LFMA-6 WT:B Micron Technology IC DRAM 2G PARALLEL 168WFBGA Anfrage
MT46H64M32LFCX-6 WT:B TR Micron Technology IC DRAM 2G PARALLEL 90VFBGA Anfrage
MT46H64M32LFMA-6 IT:B TR Image MT46H64M32LFMA-6 IT:B TR Micron Technology IC DRAM 2G PARALLEL 168WFBGA Anfrage
MT46H64M32LFMA-5 IT:A TR Image MT46H64M32LFMA-5 IT:A TR Micron Technology IC DRAM 2G PARALLEL 168WFBGA Anfrage

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