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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXTK110N20L2
IXTK110N20L2
IXTK110N20L2
Artikelnummer:
IXTK110N20L2
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 200V 110A TO-264
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
64689 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXTK110N20L2.pdf
Anfrage

Einführung

We can supply IXTK110N20L2, use the request quote form to request IXTK110N20L2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTK110N20L2.The price and lead time for IXTK110N20L2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTK110N20L2.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4.5V @ 3mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-264 (IXTK)
Serie:Linear L2™
Rds On (Max) @ Id, Vgs:24 mOhm @ 55A, 10V
Verlustleistung (max):960W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-264-3, TO-264AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:26 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:23000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:500nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):200V
detaillierte Beschreibung:N-Channel 200V 110A (Tc) 960W (Tc) Through Hole TO-264 (IXTK)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:110A (Tc)
Email:[email protected]

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