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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXTB30N100L
IXTB30N100L
IXTB30N100L
Artikelnummer:
IXTB30N100L
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 1000V 30A PLUS264
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
40718 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXTB30N100L.pdf
Anfrage

Einführung

We can supply IXTB30N100L, use the request quote form to request IXTB30N100L pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTB30N100L.The price and lead time for IXTB30N100L depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTB30N100L.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PLUS264™
Serie:-
Rds On (Max) @ Id, Vgs:450 mOhm @ 500mA, 20V
Verlustleistung (max):800W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-264-3, TO-264AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:13200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:545nC @ 20V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):20V
Drain-Source-Spannung (Vdss):1000V
detaillierte Beschreibung:N-Channel 1000V 30A (Tc) 800W (Tc) Through Hole PLUS264™
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:30A (Tc)
Email:[email protected]

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