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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFX360N15T2
IXFX360N15T2
IXFX360N15T2
Artikelnummer:
IXFX360N15T2
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 150V 360A PLUS247
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
63364 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFX360N15T2.pdf
Anfrage

Einführung

We can supply IXFX360N15T2, use the request quote form to request IXFX360N15T2 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFX360N15T2.The price and lead time for IXFX360N15T2 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFX360N15T2.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 8mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PLUS247™-3
Serie:GigaMOS™
Rds On (Max) @ Id, Vgs:4 mOhm @ 60A, 10V
Verlustleistung (max):1670W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:26 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:47500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:715nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):150V
detaillierte Beschreibung:N-Channel 150V 360A (Tc) 1670W (Tc) Through Hole PLUS247™-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:360A (Tc)
Email:[email protected]

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