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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFK32N90P
IXFK32N90P
IXFK32N90P
Artikelnummer:
IXFK32N90P
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH 900V 32A TO-264
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
24485 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFK32N90P.pdf
Anfrage

Einführung

We can supply IXFK32N90P, use the request quote form to request IXFK32N90P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFK32N90P.The price and lead time for IXFK32N90P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFK32N90P.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:6.5V @ 1mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-264AA (IXFK)
Serie:PolarHT™ HiPerFET™
Rds On (Max) @ Id, Vgs:300 mOhm @ 16A, 10V
Verlustleistung (max):960W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-264-3, TO-264AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:26 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:10600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:215nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):900V
detaillierte Beschreibung:N-Channel 900V 32A (Tc) 960W (Tc) Through Hole TO-264AA (IXFK)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:32A (Tc)
Email:[email protected]

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