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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-FETs, MOSFETs-Einzel > IXFH7N100P
IXFH7N100P
Artikelnummer:
IXFH7N100P
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET N-CH
verfügbare Anzahl:
67347 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IXFH7N100P.pdf
Anfrage

Einführung

We can supply IXFH7N100P, use the request quote form to request IXFH7N100P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXFH7N100P.The price and lead time for IXFH7N100P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXFH7N100P.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:6V @ 1mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-247
Serie:HiPerFET™, Polar™
Rds On (Max) @ Id, Vgs:1.9 Ohm @ 3.5A, 10V
Verlustleistung (max):300W (Tc)
Verpackung / Gehäuse:TO-247-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Hersteller Standard Vorlaufzeit:24 Weeks
Eingabekapazität (Ciss) (Max) @ Vds:2590pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:47nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):1000V
detaillierte Beschreibung:N-Channel 1000V 7A (Tc) 300W (Tc) Through Hole TO-247
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:7A (Tc)
Email:[email protected]

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