IRF840AL
IRF840AL
Artikelnummer:
IRF840AL
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET N-CH 500V 8A TO-262
Bleifreier Status / RoHS Status:
Enthält Blei / RoHS nicht konform
verfügbare Anzahl:
21264 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IRF840AL.pdf

Einführung

We can supply IRF840AL, use the request quote form to request IRF840AL pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRF840AL.The price and lead time for IRF840AL depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRF840AL.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:I2PAK
Serie:-
Rds On (Max) @ Id, Vgs:850 mOhm @ 4.8A, 10V
Verlustleistung (max):3.1W (Ta), 125W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-262-3 Long Leads, I²Pak, TO-262AA
Andere Namen:*IRF840AL
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:1018pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:38nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):500V
detaillierte Beschreibung:N-Channel 500V 8A (Tc) 3.1W (Ta), 125W (Tc) Through Hole I2PAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:8A (Tc)
Email:[email protected]

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