Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
VGS (th) (Max) @ Id: | 1V @ 250µA |
Supplier Device-Gehäuse: | 8-SO |
Serie: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 1A, 10V |
Leistung - max: | 2W |
Verpackung: | Tube |
Verpackung / Gehäuse: | 8-SOIC (0.154", 3.90mm Width) |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Contains lead / RoHS non-compliant |
Eingabekapazität (Ciss) (Max) @ Vds: | 300pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Typ FET: | N and P-Channel |
FET-Merkmal: | Standard |
Drain-Source-Spannung (Vdss): | 20V |
detaillierte Beschreibung: | Mosfet Array N and P-Channel 20V 3A, 2.5A 2W Surface Mount 8-SO |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C: | 3A, 2.5A |
Email: | [email protected] |