IRF6794MTRPBF
IRF6794MTRPBF
Artikelnummer:
IRF6794MTRPBF
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 25V DIRECTFET MX
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
18646 Pieces
Lieferzeit:
1-2 days
Datenblatt:
IRF6794MTRPBF.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:2.35V @ 100µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:DIRECTFET™ MX
Serie:HEXFET®
Rds On (Max) @ Id, Vgs:1.7 mOhm @ 32A, 10V
Verlustleistung (max):2.8W (Ta), 100W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:DirectFET™ Isometric MX
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):3 (168 Hours)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:4420pF @ 13V
Gate Charge (Qg) (Max) @ Vgs:47nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:Schottky Diode (Body)
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):25V
detaillierte Beschreibung:N-Channel 25V 32A (Ta), 200A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DIRECTFET™ MX
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:32A (Ta), 200A (Tc)
Email:[email protected]

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