HN4B04J(TE85L,F)
HN4B04J(TE85L,F)
Artikelnummer:
HN4B04J(TE85L,F)
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS NPN/PNP 30V 0.5A SMV
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
38250 Pieces
Lieferzeit:
1-2 days
Datenblatt:
HN4B04J(TE85L,F).pdf

Einführung

We can supply HN4B04J(TE85L,F), use the request quote form to request HN4B04J(TE85L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HN4B04J(TE85L,F).The price and lead time for HN4B04J(TE85L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HN4B04J(TE85L,F).We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):30V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Transistor-Typ:NPN, PNP
Supplier Device-Gehäuse:SMV
Serie:-
Leistung - max:300mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SC-74A, SOT-753
Andere Namen:HN4B04J(TE85LF)TR
HN4B04JTE85LF
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:200MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor Array NPN, PNP 30V 500mA 200MHz 300mW Surface Mount SMV
DC Stromgewinn (HFE) (Min) @ Ic, VCE:70 @ 100mA, 1V
Strom - Collector Cutoff (Max):100µA (ICBO)
Strom - Kollektor (Ic) (max):500mA
Email:[email protected]

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