GP2M004A065CG
GP2M004A065CG
Artikelnummer:
GP2M004A065CG
Hersteller:
Global Power Technologies Group
Beschreibung:
MOSFET N-CH 650V 4A DPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
75766 Pieces
Lieferzeit:
1-2 days
Datenblatt:
GP2M004A065CG.pdf

Einführung

We can supply GP2M004A065CG, use the request quote form to request GP2M004A065CG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number GP2M004A065CG.The price and lead time for GP2M004A065CG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# GP2M004A065CG.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:D-Pak
Serie:-
Rds On (Max) @ Id, Vgs:2.4 Ohm @ 2A, 10V
Verlustleistung (max):98.4W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:642pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 4A (Tc) 98.4W (Tc) Surface Mount D-Pak
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4A (Tc)
Email:[email protected]

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