FQU4N50TU
FQU4N50TU
Artikelnummer:
FQU4N50TU
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 500V 2.6A IPAK
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
6595 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FQU4N50TU.pdf

Einführung

We can supply FQU4N50TU, use the request quote form to request FQU4N50TU pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FQU4N50TU.The price and lead time for FQU4N50TU depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FQU4N50TU.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:I-PAK
Serie:QFET®
Rds On (Max) @ Id, Vgs:2.7 Ohm @ 1.3A, 10V
Verlustleistung (max):2.5W (Ta), 45W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-251-3 Short Leads, IPak, TO-251AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:460pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:13nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):500V
detaillierte Beschreibung:N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.6A (Tc)
Email:[email protected]

Schnell Angebot anfordern

Artikelnummer
Anzahl
Unternehmen
Email
Telefon
Bemerkung/Erläuterung