FQAF14N30
FQAF14N30
Artikelnummer:
FQAF14N30
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 300V 11.4A TO-3PF
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
76013 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FQAF14N30.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-3PF
Serie:QFET®
Rds On (Max) @ Id, Vgs:290 mOhm @ 5.7A, 10V
Verlustleistung (max):90W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:SC-94
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1360pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:40nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):300V
detaillierte Beschreibung:N-Channel 300V 11.4A (Tc) 90W (Tc) Through Hole TO-3PF
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:11.4A (Tc)
Email:[email protected]

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