FDMC8878_F126
FDMC8878_F126
Artikelnummer:
FDMC8878_F126
Hersteller:
AMI Semiconductor / ON Semiconductor
Beschreibung:
MOSFET N-CH 30V PWR33
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
28691 Pieces
Lieferzeit:
1-2 days
Datenblatt:
FDMC8878_F126.pdf

Einführung

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Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:8-MLP (3.3x3.3)
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:14 mOhm @ 9.6A, 10V
Verlustleistung (max):2.1W (Ta), 31W (Tc)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:8-PowerWDFN
Andere Namen:FDMC8878_F126CT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:N-Channel 30V 9.6A (Ta), 16.5A (Tc) 2.1W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:9.6A (Ta), 16.5A (Tc)
Email:[email protected]

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