Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Transistor-Typ: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Supplier Device-Gehäuse: | PG-SOT363-6 |
Serie: | - |
Widerstand - Emitterbasis (R2): | 47 kOhms |
Widerstand - Basis (R1): | 10 kOhms |
Leistung - max: | 250mW |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | 6-VSSOP, SC-88, SOT-363 |
Andere Namen: | BCR 35PN H6327 BCR 35PN H6327-ND BCR 35PN H6327TR-ND BCR35PNH6327 BCR35PNH6327XTSA1TR SP000757922 |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | 150MHz |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 70 @ 5mA, 5V |
Strom - Collector Cutoff (Max): | - |
Strom - Kollektor (Ic) (max): | 100mA |
Basisteilenummer: | BCR35PN |
Email: | [email protected] |