Bedingung | New & Unused, Original Packing |
---|---|
Ursprung | Contact us |
Spannung - Kollektor-Emitter-Durchbruch (max): | 50V |
VCE Sättigung (Max) @ Ib, Ic: | 300mV @ 2.5mA, 50mA |
Transistor-Typ: | NPN - Pre-Biased |
Supplier Device-Gehäuse: | SOT-23-3 |
Serie: | - |
Widerstand - Basis (R1): | 4.7 kOhms |
Leistung - max: | 330mW |
Verpackung: | Tape & Reel (TR) |
Verpackung / Gehäuse: | TO-236-3, SC-59, SOT-23-3 |
Andere Namen: | BCR 519 E6327-ND BCR519E6327 BCR519E6327XT SP000015052 |
Befestigungsart: | Surface Mount |
Feuchtigkeitsempfindlichkeitsniveau (MSL): | 1 (Unlimited) |
Bleifreier Status / RoHS-Status: | Lead free / RoHS Compliant |
Frequenz - Übergang: | 100MHz |
detaillierte Beschreibung: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 100MHz 330mW Surface Mount SOT-23-3 |
DC Stromgewinn (HFE) (Min) @ Ic, VCE: | 120 @ 50mA, 5V |
Strom - Collector Cutoff (Max): | 100nA (ICBO) |
Strom - Kollektor (Ic) (max): | 500mA |
Email: | [email protected] |