APTM10DDAM19T3G
Artikelnummer:
APTM10DDAM19T3G
Hersteller:
Microsemi
Beschreibung:
MOSFET 2N-CH 100V 70A SP3
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
30893 Pieces
Lieferzeit:
1-2 days
Datenblatt:
1.APTM10DDAM19T3G.pdf2.APTM10DDAM19T3G.pdf

Einführung

We can supply APTM10DDAM19T3G, use the request quote form to request APTM10DDAM19T3G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM10DDAM19T3G.The price and lead time for APTM10DDAM19T3G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM10DDAM19T3G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:4V @ 1mA
Supplier Device-Gehäuse:SP3
Serie:-
Rds On (Max) @ Id, Vgs:21 mOhm @ 35A, 10V
Leistung - max:208W
Verpackung:Bulk
Verpackung / Gehäuse:SP3
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Chassis Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:200nC @ 10V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):100V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 100V 70A 208W Chassis Mount SP3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:70A
Email:[email protected]

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