APT50GP60B2DQ2G
APT50GP60B2DQ2G
Artikelnummer:
APT50GP60B2DQ2G
Hersteller:
Microsemi
Beschreibung:
IGBT 600V 150A 625W TMAX
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
49417 Pieces
Lieferzeit:
1-2 days
Datenblatt:
APT50GP60B2DQ2G.pdf

Einführung

We can supply APT50GP60B2DQ2G, use the request quote form to request APT50GP60B2DQ2G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APT50GP60B2DQ2G.The price and lead time for APT50GP60B2DQ2G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APT50GP60B2DQ2G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
Spannung - Kollektor-Emitter-Durchbruch (max):600V
VCE (on) (Max) @ Vge, Ic:2.7V @ 15V, 50A
Testbedingung:400V, 50A, 4.3 Ohm, 15V
Td (ein / aus) bei 25 ° C:19ns/85ns
Schaltenergie:465µJ (on), 635µJ (off)
Serie:POWER MOS 7®
Leistung - max:625W
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3 Variant
Andere Namen:APT50GP60B2DQ2GMI
APT50GP60B2DQ2GMI-ND
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:PT
Gate-Ladung:165nC
detaillierte Beschreibung:IGBT PT 600V 150A 625W Through Hole
Strom - Collector Pulsed (Icm):190A
Strom - Kollektor (Ic) (max):150A
Email:[email protected]

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