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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > TK5Q65W,S1Q
TK5Q65W,S1Q
TK5Q65W,S1Q
Part Number:
TK5Q65W,S1Q
Výrobce:
Toshiba Semiconductor and Storage
Popis:
MOSFET N-CH 650V 5.2A IPAK
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
22680 Pieces
Čas doručení:
1-2 days
Datový list:
TK5Q65W,S1Q.pdf
Dotaz

Úvod

We can supply TK5Q65W,S1Q, use the request quote form to request TK5Q65W,S1Q pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK5Q65W,S1Q.The price and lead time for TK5Q65W,S1Q depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK5Q65W,S1Q.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:3.5V @ 170µA
Vgs (Max):±30V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:I-PAK
Série:DTMOSIV
RDS On (Max) @ Id, Vgs:1.22 Ohm @ 2.6A, 10V
Ztráta energie (Max):60W (Tc)
Obal:Tube
Paket / krabice:TO-251-3 Stub Leads, IPak
Ostatní jména:TK5Q65W,S1Q(S
TK5Q65WS1Q
Provozní teplota:150°C (TJ)
Typ montáže:Through Hole
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:380pF @ 300V
Nabíjení brány (Qg) (Max) @ Vgs:10.5nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):650V
Detailní popis:N-Channel 650V 5.2A (Ta) 60W (Tc) Through Hole I-PAK
Proud - kontinuální odtok (Id) @ 25 ° C:5.2A (Ta)
Email:[email protected]

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