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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > TK16N60W,S1VF
TK16N60W,S1VF
TK16N60W,S1VF
Part Number:
TK16N60W,S1VF
Výrobce:
Toshiba Semiconductor and Storage
Popis:
MOSFET N CH 600V 15.8A TO247
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
34857 Pieces
Čas doručení:
1-2 days
Datový list:
TK16N60W,S1VF.pdf
Dotaz

Úvod

We can supply TK16N60W,S1VF, use the request quote form to request TK16N60W,S1VF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK16N60W,S1VF.The price and lead time for TK16N60W,S1VF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK16N60W,S1VF.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:3.7V @ 790µA
Vgs (Max):±30V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:TO-247
Série:DTMOSIV
RDS On (Max) @ Id, Vgs:190 mOhm @ 7.9A, 10V
Ztráta energie (Max):130W (Tc)
Obal:Tube
Paket / krabice:TO-247-3
Ostatní jména:TK16N60W,S1VF(S
TK16N60WS1VF
Provozní teplota:150°C (TJ)
Typ montáže:Through Hole
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:1350pF @ 300V
Nabíjení brány (Qg) (Max) @ Vgs:38nC @ 10V
Typ FET:N-Channel
FET Feature:Super Junction
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):600V
Detailní popis:N-Channel 600V 15.8A (Ta) 130W (Tc) Through Hole TO-247
Proud - kontinuální odtok (Id) @ 25 ° C:15.8A (Ta)
Email:[email protected]

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