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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > IXTD4N80P-3J
IXTD4N80P-3J
Part Number:
IXTD4N80P-3J
Výrobce:
IXYS Corporation
Popis:
MOSFET N-CH 800
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
11888 Pieces
Čas doručení:
1-2 days
Datový list:
IXTD4N80P-3J.pdf
Dotaz

Úvod

We can supply IXTD4N80P-3J, use the request quote form to request IXTD4N80P-3J pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTD4N80P-3J.The price and lead time for IXTD4N80P-3J depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTD4N80P-3J.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:5.5V @ 100µA
Vgs (Max):±30V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:Die
Série:PolarHV™
RDS On (Max) @ Id, Vgs:3.4 Ohm @ 1.8A, 10V
Ztráta energie (Max):100W (Tc)
Paket / krabice:Die
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Surface Mount
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:750pF @ 25V
Nabíjení brány (Qg) (Max) @ Vgs:14.2nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):800V
Detailní popis:N-Channel 800V 3.6A (Tc) 100W (Tc) Surface Mount Die
Proud - kontinuální odtok (Id) @ 25 ° C:3.6A (Tc)
Email:[email protected]

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