SQJ431EP-T1_GE3
SQJ431EP-T1_GE3
型號:
SQJ431EP-T1_GE3
製造商:
Vishay / Siliconix
描述:
MOSFET P-CHAN 200V SO8L
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
79362 Pieces
發貨時間:
1-2 days
數據表:
SQJ431EP-T1_GE3.pdf

簡單介紹

We can supply SQJ431EP-T1_GE3, use the request quote form to request SQJ431EP-T1_GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJ431EP-T1_GE3.The price and lead time for SQJ431EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SQJ431EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
電壓 - 測試:4355pF @ 25V
電壓 - 擊穿:PowerPAK® SO-8
VGS(TH)(最大)@標識:213 mOhm @ 1A, 4V
Vgs(最大):6V, 10V
技術:MOSFET (Metal Oxide)
系列:Automotive, AEC-Q101, TrenchFET®
RoHS狀態:Tape & Reel (TR)
RDS(ON)(最大值)@標識,柵極電壓:12A (Tc)
極化:PowerPAK® SO-8
其他名稱:SQJ431EP-T1_GE3TR
工作溫度:-55°C ~ 175°C (TJ)
安裝類型:Surface Mount
濕度敏感度(MSL):1 (Unlimited)
製造商標準交貨期:18 Weeks
製造商零件編號:SQJ431EP-T1_GE3
輸入電容(Ciss)(Max)@ Vds:160nC @ 10V
IGBT類型:±20V
柵極電荷(Qg)(Max)@ Vgs:3.5V @ 250µA
FET特點:P-Channel
展開說明:P-Channel 200V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
漏極至源極電壓(Vdss):-
描述:MOSFET P-CHAN 200V SO8L
電流 - 25°C連續排水(Id):200V
電容比:83W (Tc)
Email:[email protected]

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