SIHF30N60E-GE3
SIHF30N60E-GE3
型號:
SIHF30N60E-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N-CH 600V 29A TO220
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
55587 Pieces
發貨時間:
1-2 days
數據表:
SIHF30N60E-GE3.pdf

簡單介紹

We can supply SIHF30N60E-GE3, use the request quote form to request SIHF30N60E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHF30N60E-GE3.The price and lead time for SIHF30N60E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHF30N60E-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:4V @ 250µA
Vgs(最大):±30V
技術:MOSFET (Metal Oxide)
系列:E
RDS(ON)(最大值)@標識,柵極電壓:125 mOhm @ 15A, 10V
功率耗散(最大):37W (Tc)
封装:Cut Tape (CT)
封裝/箱體:TO-220-3 Full Pack
其他名稱:SIHF30N60E-GE3CT
SIHF30N60E-GE3CT-ND
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Through Hole
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:2600pF @ 100V
柵極電荷(Qg)(Max)@ Vgs:130nC @ 10V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):10V
漏極至源極電壓(Vdss):600V
詳細說明:N-Channel 600V 29A (Tc) 37W (Tc) Through Hole
電流 - 25°C連續排水(Id):29A (Tc)
Email:[email protected]

快速詢價

型號
數量
公司
邮箱
電話
要求