SIHF12N60E-GE3
SIHF12N60E-GE3
型號:
SIHF12N60E-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET N-CH 600V 12A TO220 FULLP
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
32237 Pieces
發貨時間:
1-2 days
數據表:
SIHF12N60E-GE3.pdf

簡單介紹

We can supply SIHF12N60E-GE3, use the request quote form to request SIHF12N60E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHF12N60E-GE3.The price and lead time for SIHF12N60E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHF12N60E-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
電壓 - 測試:937pF @ 100V
VGS(TH)(最大)@標識:380 mOhm @ 6A, 10V
Vgs(最大):10V
技術:MOSFET (Metal Oxide)
系列:E
RoHS狀態:Digi-Reel®
RDS(ON)(最大值)@標識,柵極電壓:12A (Tc)
極化:TO-220-3 Full Pack
其他名稱:SIHF12N60E-GE3DKR
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Through Hole
濕度敏感度(MSL):1 (Unlimited)
製造商標準交貨期:19 Weeks
製造商零件編號:SIHF12N60E-GE3
輸入電容(Ciss)(Max)@ Vds:58nC @ 10V
IGBT類型:±30V
柵極電荷(Qg)(Max)@ Vgs:4V @ 250µA
FET特點:N-Channel
展開說明:N-Channel 600V 12A (Tc) 33W (Tc) Through Hole
漏極至源極電壓(Vdss):-
描述:MOSFET N-CH 600V 12A TO220 FULLP
電流 - 25°C連續排水(Id):600V
電容比:33W (Tc)
Email:[email protected]

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