SIHG33N65E-GE3
SIHG33N65E-GE3
Artikelnummer:
SIHG33N65E-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N-CH 650V 32.4A TO-247AC
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
46923 Pieces
Leveranstid:
1-2 days
Datablad:
SIHG33N65E-GE3.pdf

Introduktion

We can supply SIHG33N65E-GE3, use the request quote form to request SIHG33N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHG33N65E-GE3.The price and lead time for SIHG33N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHG33N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-247AC
Serier:-
Rds On (Max) @ Id, Vgs:105 mOhm @ 16.5A, 10V
Effektdissipation (Max):313W (Tc)
Förpackning:Cut Tape (CT)
Förpackning / Fodral:TO-247-3
Andra namn:SIHG33N65E-GE3CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:20 Weeks
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:4040pF @ 100V
Gate Laddning (Qg) (Max) @ Vgs:173nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):650V
detaljerad beskrivning:N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:32.4A (Tc)
Email:[email protected]

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