HUF75329S3
HUF75329S3
Artikelnummer:
HUF75329S3
Tillverkare:
AMI Semiconductor / ON Semiconductor
Beskrivning:
MOSFET N-CH 55V 49A D2PAK
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
63843 Pieces
Leveranstid:
1-2 days
Datablad:
HUF75329S3.pdf

Introduktion

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Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:D²PAK (TO-263AB)
Serier:UltraFET™
Rds On (Max) @ Id, Vgs:24 mOhm @ 49A, 10V
Effektdissipation (Max):128W (Tc)
Förpackning:Tube
Förpackning / Fodral:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:1060pF @ 25V
Gate Laddning (Qg) (Max) @ Vgs:75nC @ 20V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):55V
detaljerad beskrivning:N-Channel 55V 49A (Tc) 128W (Tc) Surface Mount D²PAK (TO-263AB)
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:49A (Tc)
Email:[email protected]

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