SIHG33N65E-GE3
SIHG33N65E-GE3
Delenummer:
SIHG33N65E-GE3
Produsent:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 650V 32.4A TO-247AC
Lead Free Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgjengelig mengde:
46923 Pieces
Leveringstid:
1-2 days
Dataark:
SIHG33N65E-GE3.pdf

Introduksjon

We can supply SIHG33N65E-GE3, use the request quote form to request SIHG33N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHG33N65E-GE3.The price and lead time for SIHG33N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHG33N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

spesifikasjoner

Tilstand New & Unused, Original Packing
Opprinnelse Contact us
Vgs (th) (Maks) @ Id:4V @ 250µA
Vgs (maks):±30V
Teknologi:MOSFET (Metal Oxide)
Leverandør Enhetspakke:TO-247AC
Serie:-
Rds På (Maks) @ Id, Vgs:105 mOhm @ 16.5A, 10V
Strømdissipasjon (maks):313W (Tc)
emballasje:Cut Tape (CT)
Pakke / tilfelle:TO-247-3
Andre navn:SIHG33N65E-GE3CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Through Hole
Vannfølsomhetsnivå (MSL):1 (Unlimited)
Produsentens Standard Lead Time:20 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Inputkapasitans (Ciss) (Maks) @ Vds:4040pF @ 100V
Gateavgift (Qg) (Maks) @ Vgs:173nC @ 10V
FET Type:N-Channel
FET-funksjonen:-
Drivspenning (Maks. Rds På, Min Rds På):10V
Drain til Source Voltage (VDSS):650V
Detaljert beskrivelse:N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC
Strøm - Kontinuerlig avløp (Id) @ 25 ° C:32.4A (Tc)
Email:[email protected]

Quick Request Quote

Delenummer
Mengde
Selskap
E-post
telefon
kommentarer