HUF75329D3
HUF75329D3
Onderdeel nummer:
HUF75329D3
Fabrikant:
AMI Semiconductor / ON Semiconductor
Beschrijving:
MOSFET N-CH 55V 20A IPAK
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
5984 Pieces
Aflevertijd:
1-2 days
Data papier:
HUF75329D3.pdf

Invoering

We can supply HUF75329D3, use the request quote form to request HUF75329D3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number HUF75329D3.The price and lead time for HUF75329D3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# HUF75329D3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:TO-251AA
Serie:UltraFET™
Rds On (Max) @ Id, VGS:26 mOhm @ 20A, 10V
Vermogensverlies (Max):128W (Tc)
Packaging:Tube
Verpakking / doos:TO-251-3 Short Leads, IPak, TO-251AA
Temperatuur:-55°C ~ 175°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1060pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:65nC @ 20V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):55V
gedetailleerde beschrijving:N-Channel 55V 20A (Tc) 128W (Tc) Through Hole TO-251AA
Current - Continuous Drain (Id) @ 25 ° C:20A (Tc)
Email:[email protected]

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