SIHG33N65E-GE3
SIHG33N65E-GE3
Nomor bagian:
SIHG33N65E-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 650V 32.4A TO-247AC
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
46923 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SIHG33N65E-GE3.pdf

pengantar

We can supply SIHG33N65E-GE3, use the request quote form to request SIHG33N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHG33N65E-GE3.The price and lead time for SIHG33N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHG33N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-247AC
Seri:-
Rds Pada (Max) @ Id, Vgs:105 mOhm @ 16.5A, 10V
Power Disipasi (Max):313W (Tc)
Pengemasan:Cut Tape (CT)
Paket / Case:TO-247-3
Nama lain:SIHG33N65E-GE3CT
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:20 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:4040pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:173nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):650V
Detil Deskripsi:N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC
Current - Continuous Drain (Id) @ 25 ° C:32.4A (Tc)
Email:[email protected]

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