Kondisi | New & Unused, Original Packing |
---|---|
Asal | Contact us |
Tegangan - Uji: | 1224pF @ 100V |
Tegangan - Breakdown: | TO-220 Full Pack |
Vgs (th) (Max) @ Id: | 380 mOhm @ 6A, 10V |
Teknologi: | MOSFET (Metal Oxide) |
Seri: | - |
Status RoHS: | Bulk |
Rds Pada (Max) @ Id, Vgs: | 12A (Tc) |
Polarisasi: | TO-220-3 Full Pack |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Through Hole |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 19 Weeks |
Nomor Bagian Produsen: | SIHF12N65E-GE3 |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 70nC @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 4V @ 250µA |
Fitur FET: | N-Channel |
Deskripsi yang Diperluas: | N-Channel 650V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack |
Tiriskan untuk Sumber Tegangan (Vdss): | - |
Deskripsi: | MOSFET N-CH 650V 12A TO-220 |
Current - Continuous Drain (Id) @ 25 ° C: | 650V |
kapasitansi Ratio: | 33W (Tc) |
Email: | [email protected] |