SIHF12N60E-GE3
SIHF12N60E-GE3
Nomor bagian:
SIHF12N60E-GE3
Pabrikan:
Vishay / Siliconix
Deskripsi:
MOSFET N-CH 600V 12A TO220 FULLP
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
32237 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SIHF12N60E-GE3.pdf

pengantar

We can supply SIHF12N60E-GE3, use the request quote form to request SIHF12N60E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHF12N60E-GE3.The price and lead time for SIHF12N60E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHF12N60E-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Tegangan - Uji:937pF @ 100V
Vgs (th) (Max) @ Id:380 mOhm @ 6A, 10V
Vgs (Max):10V
Teknologi:MOSFET (Metal Oxide)
Seri:E
Status RoHS:Digi-Reel®
Rds Pada (Max) @ Id, Vgs:12A (Tc)
Polarisasi:TO-220-3 Full Pack
Nama lain:SIHF12N60E-GE3DKR
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Tingkat Sensitivitas Kelembaban (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:19 Weeks
Nomor Bagian Produsen:SIHF12N60E-GE3
Kapasitansi Masukan (Ciss) (Max) @ VDS:58nC @ 10V
IGBT Jenis:±30V
Gate Charge (Qg) (Max) @ Vgs:4V @ 250µA
Fitur FET:N-Channel
Deskripsi yang Diperluas:N-Channel 600V 12A (Tc) 33W (Tc) Through Hole
Tiriskan untuk Sumber Tegangan (Vdss):-
Deskripsi:MOSFET N-CH 600V 12A TO220 FULLP
Current - Continuous Drain (Id) @ 25 ° C:600V
kapasitansi Ratio:33W (Tc)
Email:[email protected]

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