SIHD6N62E-GE3
SIHD6N62E-GE3
Nomor bagian:
SIHD6N62E-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 620V 6A TO-252
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
50879 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SIHD6N62E-GE3.pdf

pengantar

We can supply SIHD6N62E-GE3, use the request quote form to request SIHD6N62E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHD6N62E-GE3.The price and lead time for SIHD6N62E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHD6N62E-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:D-PAK (TO-252AA)
Seri:-
Rds Pada (Max) @ Id, Vgs:900 mOhm @ 3A, 10V
Power Disipasi (Max):78W (Tc)
Pengemasan:Cut Tape (CT)
Paket / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Nama lain:SIHD6N62E-GE3CT
SIHD6N62E-GE3CT-ND
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:578pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:34nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Detil Deskripsi:N-Channel 6A (Tc) 78W (Tc) Surface Mount D-PAK (TO-252AA)
Current - Continuous Drain (Id) @ 25 ° C:6A (Tc)
Email:[email protected]

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