SIHB22N65E-GE3
SIHB22N65E-GE3
Nomor bagian:
SIHB22N65E-GE3
Pabrikan:
Vishay / Siliconix
Deskripsi:
MOSFET N-CH 650V 22A D2PAK
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
47926 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SIHB22N65E-GE3.pdf

pengantar

We can supply SIHB22N65E-GE3, use the request quote form to request SIHB22N65E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHB22N65E-GE3.The price and lead time for SIHB22N65E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHB22N65E-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Tegangan - Uji:2415pF @ 100V
Tegangan - Breakdown:D2PAK
Vgs (th) (Max) @ Id:180 mOhm @ 11A, 10V
Vgs (Max):10V
Teknologi:MOSFET (Metal Oxide)
Seri:-
Status RoHS:Tape & Reel (TR)
Rds Pada (Max) @ Id, Vgs:22A (Tc)
Polarisasi:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nama lain:SIHB22N65E-GE3TR
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Tingkat Sensitivitas Kelembaban (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:19 Weeks
Nomor Bagian Produsen:SIHB22N65E-GE3
Kapasitansi Masukan (Ciss) (Max) @ VDS:110nC @ 10V
IGBT Jenis:±30V
Gate Charge (Qg) (Max) @ Vgs:4V @ 250µA
Fitur FET:N-Channel
Deskripsi yang Diperluas:N-Channel 650V 22A (Tc) 227W (Tc) Surface Mount D2PAK
Tiriskan untuk Sumber Tegangan (Vdss):-
Deskripsi:MOSFET N-CH 650V 22A D2PAK
Current - Continuous Drain (Id) @ 25 ° C:650V
kapasitansi Ratio:227W (Tc)
Email:[email protected]

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