SIE810DF-T1-E3
SIE810DF-T1-E3
Nomor bagian:
SIE810DF-T1-E3
Pabrikan:
Vishay / Siliconix
Deskripsi:
MOSFET N-CH 20V 60A 10-POLARPAK
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
54923 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SIE810DF-T1-E3.pdf

pengantar

We can supply SIE810DF-T1-E3, use the request quote form to request SIE810DF-T1-E3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIE810DF-T1-E3.The price and lead time for SIE810DF-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIE810DF-T1-E3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Tegangan - Uji:13000pF @ 10V
Tegangan - Breakdown:10-PolarPAK® (L)
Vgs (th) (Max) @ Id:1.4 mOhm @ 25A, 10V
Teknologi:MOSFET (Metal Oxide)
Seri:TrenchFET®
Status RoHS:Tape & Reel (TR)
Rds Pada (Max) @ Id, Vgs:60A (Tc)
Polarisasi:10-PolarPAK® (L)
Nama lain:SIE810DF-T1-E3TR
SIE810DFT1E3
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Tingkat Sensitivitas Kelembaban (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Nomor Bagian Produsen:SIE810DF-T1-E3
Kapasitansi Masukan (Ciss) (Max) @ VDS:300nC @ 10V
Gate Charge (Qg) (Max) @ Vgs:2V @ 250µA
Fitur FET:N-Channel
Deskripsi yang Diperluas:N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Tiriskan untuk Sumber Tegangan (Vdss):-
Deskripsi:MOSFET N-CH 20V 60A 10-POLARPAK
Current - Continuous Drain (Id) @ 25 ° C:20V
kapasitansi Ratio:5.2W (Ta), 125W (Tc)
Email:[email protected]

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